Galata Sotiria


Office:  A209, Building A, Ancient Olive Grove Campus

Phone: +30 210 538-1643

Labortory: ZB113, Building Z, Ancient Olive Grove Campus

e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Office hours: Tuesday 15:00-17:00 & Friday 15:00-17:00



Google Scholar:



Discipline: Development and characterization of microelectronic devices



2005 – PhD – School of Electronics and Physical Sciences, Advanced Technology Institute (ATI), University of Surrey – UK

2000 – BSc in Physics – Department of Physics – Faculty of Sciences – Aristotle University of Thessaloniki (AUTH), Thessaloniki, GREECE


Research Interests

  • Smart textiles
  • Triboelectricity in textile structures
  • Dielectric spectroscopy of polymers with graphene and carbon nanotubes
  • Molecular Beam Epitaxy (MBE) growth of Metal Oxide Semiconductor (MOS) electronic devices
  • Structural characterization using X-Ray Diffraction (XRD), X-Ray Reflectometry (XRR), Transmission Electron Microscopy (TEM)
  • Electric Characterization of MOS devices (at room temperature and lower temperature)
  • Theoretical calculations of experiments. Calculation of dielectric coefficient of oxides from MOS devices
  • Qualitative Analysis of dielectric surfaces using X-ray Photoelectron Spectroscopy (XPS) and Ultra Violet Photoelectron Spectroscopy (UPS)


Representative Publications

  • Aristeidis Repoulias, Savvas Vassiliadis & Sotiria F. Galata, ‘Triboelectricity and textile structures’, The Journal of The Textile Institute, 112:10, pp. 1580-1587 (2021)
  • Boscherini, F. D'Acapito, S.F. Galata, D. Tsoutsou, A. Dimoulas, ‘Atomic scale mechanism for the Ge-induced stabilization of the tetragonal, very high-κ, phase of ZrO2, Applied Physics Letters 99 (12), pp. 121909 (2011).
  • Ioannou-Sougleridis, S.F. Galata, E. Golias, T. Speliotis, A. Dimoulas, D. Giubertoni, S. Gennaro, M. Barozzi, ‘High performance n+/p and p+/n germanium diodes at low-temperature activation annealing’, Microelectronic Engineering 88 (3), pp. 254-261 (2011).
  • Dimoulas, D. Tsoutsou, S.F. Galata, Y. Panayiotatos, G. Mavrou, E. Golias, ‘Ge surfaces and its passivation by rare earth lanthanum germanate dielectric’, ECS Transactions 33 (6), pp. 433-446 (2010).
  • S. F. Galata, G. Mavrou, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, and A. Dimoulas, ‘Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal’, Journal of Vacuum Science and Technology B 27, 246 (2009)
  • Tsoutsou, G. Apostolopoulos, S. F. Galata, P. Tsipas, A. Sotiropoulos, G. Mavrou, Y. Panayiotatos, A. Dimoulas, A. Lagoyannis, A. G. Karydas, V. Kantarelou and S. Harissopoulos, ‘Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition’, Journal of Applied Physics 106, 024107 (2009).
  • Dimoulas, Y. Panayiotatos, P. Tsipas, S. Galata, G. Mavrou, A. Sotiropoulos, C. Marchiori, C. Rossel, D. Webb, C. Andersson, M. Sousa, M. Richter, J. Fompeyrine, ‘Gate Dielectrics for High Mobility Semiconductors’, Journal of ECS Transactions 16 (5) 295 (2008).
  • Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, ‘Germanium-induced stabilization of a very high-k zirconia phase in ZrO2 /GeO2 gate stacks’, Journal of Applied Physics Letters, 93, 082904 (2008).
  • Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J.W. Seo, Ch. Dieker, ‘Electrical properties of La2O3 and HfO2 / La2O3 gate dielectrics for Germanium MOS devices’ Journal of Applied Physics’, 103, 014506 (2008).
  • Mavrou, S. F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J.W. Seo, Ch. Dieker, ‘Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric’, Microelectronic Engineering 84 (9-10), pp. 2324-2327 (2007).
  • S. F. Galata, E.K. Evangelou, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas, ‘Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium’, Microelectronics Reliability 47 (4-5 SPEC. ISS.), pp. 532-535 (2007).
  • S. F. Galata, M. A. Lourenco, R. M. Gwilliam and K. P. Homewood, ‘Sulphur doped Silicon light emitting diodes’, Materials Science and Engineering B 124-125 (SUPPL.), pp. 435-439 (2005).
  • Lourenco, M. Milosavlijevic, S. Galata, M. S. A. Siddiqui, G. Shao, R. M. Gwilliam and K. P. Homewood, ‘Silicon based light emitting devices’, Journal of Vacuum 78, 551 (2005).
  • R. Power, O. Pulci, A. I. Shkrebtii, S. Galata, A. Astropekakis, K. Hinrichs, N. Esser, R. Del Sole and W. Richter, ‘Sb-induced (1x1) reconstruction on Si(001)’, Physical Review B 67, 115315 (2003).
  • Gwilliam, MA Lourenco, S Galata, KP Homewood, G Shao, ‘Efficient optical sources in silicon using dislocation engineering’, Photonics for Space Environments VIII, Proceedings of the Society of Photo-optical Instrumentation engineers (SPIE) 4823 155-161 (2002).
  • Astropekakis, J.R. Power, K. Fleischer, N. Esser, S. Galata, D. Papadimitriou, and W. Richter, ‘Influence of Sn on the optical anisotropy of single-domain Si(001)’, Physical Review B, 63, 085317 (2001)


Undergraduate Courses

  • EEE.2.2 Electronics I

  • EEE.7-3.4 Semiconductor Devices


Postgraduate Courses


Curriculum Vitae



Please publish modules in offcanvas position.